Static power converter multilevel phase driver containing power semiconductors and additional power semiconductor to attenuate ripple voltage
US6101109A · kind A · utility
Inventors
Key dates
| Filing date | Apr 27, 1999 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Apr 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02P27/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In the particular embodiments described, an unlimited voltage static power converter includes an array of multi-level phase drivers consisting of a plurality of H-bridge power modules connected in series. The midpoint node of the series-connected power semiconductors is connected to corresponding midpoint nodes in adjacent H-bridges to achieve a desired high output voltage using available power switch ratings. A three-dimensional multi-level, multi-phase, multi-circuit array of H-bridges permits the use of the static power converter for high power applications, while providing a high degree of power quality. The power semiconductor switches are operated in accordance with a two-dimensional interleaved pulse width modulation algorithm which produces a waveform with a switching frequency that can be more than an order of magnitude higher than the switching frequency of a single power switch. PWM complementary triangle carrier waves are used for individual PWM control of each H-bridge in each multi-level phase driver, resulting in a two-dimensional interleaved control algorithm. Injection of harmonic or non-harmonic content into the PWM reference waveform further reduces harmonic and …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.