Active pixel sensor with intra-pixel charge transfer
US6101232A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1995 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Nov 16, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/40
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.