Method for making an optical waveguide component using a low-stress silicon photomask
US6103318A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 1998 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | May 26, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/151
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a layer of silicon on a surface comprises the steps of depositing silicon on the surface by a physical deposition process such as electron beam evaporation and, during said deposition process, subjecting the forming film to ionic bombardment. The resultant silicon film has stresses which are considerably reduced compared to a film produced by an ordinary physical deposition process. This method is particularly well adapted to the formation of relatively thick silicon layers (.gtoreq.1 .mu.m) on a layer (or stack of layers) of silica, to serve as an etching mask in a subsequent deep etching of the silica by reactive ion etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.