Clathrate structure for electronic and electro-optic applications
US6103403A · kind A · utility
39Cited by
10References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1997 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | May 15, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method including the steps of (a) depositing a metal layer on a selected portion of a silicon substrate under a first set of predetermined conditions to form an metal silicide layer and an intermediate n-type silicon layer; and (b) exposing the metal silicide layer and the n-type silicon layer to a second set of predetermined conditions to form a silicon clathrate film on the selected portion of the silicon substrate, where the intermediate n-type silicon layer acts to bond the silicon clathrate to the silicon substrate to form a silicon clathrate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.