Process for producing electrooptical apparatus and process for producing driving substrate for electrooptical apparatus
US6103558A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Sep 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A single crystal silicon thin film having a high electron/hole mobility is uniformly formed at a relatively low temperature, so that production of an active matrix substrate having a built-in high performance driver and an electrooptical apparatus, such as a thin film semiconductor apparatus for display, becomes possible. A single crystal silicon layer is formed by hetero-epitaxial growth from a molten liquid layer of a low melting point metal having silicon dissolved therein by using a crystalline sapphire film formed on a substrate as a seed, and the single crystal silicon layer is used in a top gate type MOS TFT of an electrooptical apparatus, such as an LCD, in which a display part and a peripheral driving circuit are integrated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.