Method of making semiconductor device with decreased channel width and constant threshold voltage
US6103562A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1999 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Jan 5, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/919
Abstract
Semiconductor device and method for fabricating the same, is disclosed, which can maintain a threshold voltage constant despite of decreased channel width, the device including a first, and a second conductive type wells in a substrate, a first, and a second gate insulating films on the first, and the second conductive type wells, a first gate electrode on the first gate insulating film, the first gate electrode being doped with a second conductive type except for edges of the first gate electrode in a channel width direction counter doped with a first conductive type, a second gate electrode on the second gate insulating film, the second gate electrode being doped with a first conductive type except for edges of the second gate electrode in a channel width direction counter doped with a second conductive type, and isolating regions formed between the first, and second conductive type wells, the first, and second gate insulating films, and the first, and second gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.