Method of manufacturing semiconductor device
US6103631A · kind A · utility
10Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1998 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Dec 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device manufacturing method, HBr gas (etching gas) is made plasma while the gas pressure thereof is kept to 2 mTorr or less, and ion elements of the plasma are accelerated under bias power of 150 W or more to etch a titanium silicide film 11. Thereafter, HBr gas is further made plasma while the gas pressure thereof is kept to 5 to 10 mTorr, and ion elements of the plasma are accelerated under bias power of 10 to 100 W to etch a polysilicon film 10 with the ion elements in the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.