Liquid crystal display having a transistor with doped region in an active semiconductor layer
US6104040A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1997 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136245
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor element suitable for use in the display region of a liquid crystal display or for use in the drive circuit region for driving the display region is comprised of first, second, third and fourth electrodes; a pair of first conducting type semiconductor layers separated from each other and connected to the second and the third electrodes, respectively; an intrinsic semiconductor layer connected to the pair of the first conductivity type semiconductor layers; and a second conductivity type semiconductor layer formed on the intrinsic semiconductor layer, wherein an insulating film is interposed between the first electrode and the intrinsic semiconductor layer, and the fourth electrode is formed on the second conductivity type semiconductor layer formed on the intrinsic semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.