Avalanche photodiode with thin built-in depletion region
US6104047A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 1, 1999 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Jul 1, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The present invention relates to an avalanche photodiode having a simple structure, high reliability, and a high speed response on the order of Gbps. This photodiode is formed by depositing laminated layers on a semiconductor substrate in the order of an n-type buffer layer, a semiconductor multiplication layer, a p-type semiconductor field buffer layer, a p-type semiconductor light absorbing layer, a p-type semiconductor cap layer, and a p-type semiconductor contact layer, and said p-type semiconductor light absorbing layer is constructed by two layers consisted of a depleted region of a thickness in the range of 10 nm to 0.3 .mu.m disposed adjacent to the p-type semiconductor field buffer layer and a non-depleted layer region at a thickness of less than 2 .mu.m disposed adjacent to the depleted layer region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.