Design for a semiconductor device having elements isolated by insulating regions
US6104078A · kind A · utility
16Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1997 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Sep 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76264
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a semiconductor substrate having a main surface. An insulating film is formed on the main surface of the semiconductor substrate. A semiconductor layer is placed on the insulating film. Side insulating regions extending from a surface of the semiconductor layer to the insulating film divide the semiconductor layer into element regions. The element regions are isolated from each other by the side insulating regions and the insulating film. The semiconductor substrate has a resistivity of 1.5 .OMEGA.cm or lower. A voltage at the semiconductor substrate is set to a given voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.