Magnetoresistive element
US6104275A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 1999 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Mar 18, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element is obtained which can exhibit a larger MR change than conventional. The magnetoresistive element is characterized as comprising a multilayer film 3 having a multilayer structure in which a nonmagnetic conductive layer 5 is interposed between a pair of ferromagnetic layer 4, 6, a pair of electrodes 7, 8 which produces a detection current flow through the multilayer film 3, and filter layers 1, 2 comprised of ferromagnetic material and disposed between at least one of the pair of ferromagnetic layers and the electrodes 7, 8 for delivering spin-polarized electrons to the ferromagnetic layers 4, 6, and characterized that a traveling distance of electrons in the ferromagnetic layers 4, 6 is maintained shorter than a spin diffusion length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.