Series of strongly complex coupled DFB lasers
US6104739A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1997 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Dec 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A one dimensional series of complex coupled (gain or loss coupled) DFB semiconductor lasers is disclosed. Each laser comprises a multiple quantum well active region and a complex coupled grating having corrugations along a cavity length direction formed by periodically etching grooves through the active region. The grating has a period comprising a first section and a second section, wherein substantially all quantum wells are etched away from the second section providing no substantial photon generation in the second section. The depth of etching is defined so as to provide a substantial insensitivity of each laser to the external feedback and random facet variations and to ensure no substantial interaction between lasers in the series. The lasers in the series may further comprise means for tuning laser wavelengths around corresponding lasing modes and/or means for switching between the lasing modes. The series of lasers is also capable of simultaneous multi-wavelength generation, with the number of generated wavelengths being equal to a number of lasers in the series excited above threshold levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.