Method of manufacturing a thin film sensor element
US6105225A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1996 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Feb 9, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4981
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.