Apparatus for forming a copper interconnect
US6106680A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1999 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Jan 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2885
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for fabricating electrochemical copper interconnections between the component parts of an integrated circuit on a semiconductor device. A cathodic platter is provided that includes contact pins that contact the surface of a semiconductor wafer at predetermined locations during the electrochemical deposition process. The contact pins are arranged on the cathodic platter so that when placed on the surface of the semiconductor wafer the contact pins surround the perimetrical edges of each respective semiconductor device on the semiconductor wafer. Once the semiconductor wafer is properly positioned on the cathodic platter, a copper conductive layer can be electrochemically and uniformly deposited on the surface of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.