Process for preparing nitride film
US6106898A · kind A · utility
12Cited by
0References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 23, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Sep 23, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for preparing a nitride film by a chemical vapor deposition method, which entails reacting a material gas including tert-butyl hydrazene as the main component as the main component of a nitrogen source with a material gas of an organometallic compound, a metal halide or a metal hydride to deposit the nitride film on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.