Silicon sensor contact with platinum silicide, titanium/tungsten and gold
US6107170A · kind A · utility
3Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Jul 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method for forming a metal contact for a silicon sensor. First, platinum is deposited over a contact area. Then the platinum is sintered to form platinum silicide. Subsequently, titanium/tungsten (TiW) is deposited over the platinum silicide. Finally, gold is deposited over the TiW.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.