Method for improving the morphology of refractory metal thin films
US6107199A · kind A · utility
241Cited by
8References
14Claims
0Family size
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Key dates
| Filing date | Oct 24, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Oct 24, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a smooth surface for a film of refractory metallic material is realized by placing a substrate in a CVD reactor; initiating deposition of a layer of two phase material via concurrent introduction into the CVD reactor of a precursor gas and molecular oxygen, the latter at a pressure between about 1.times.10.sup.-6 and 1.times.10.sup.-4 ; and annealing the treated layer at the deposition temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.