Semiconductor thin film, method for manufacturing the same, and solar cell using the same
US6107562A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1999 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Mar 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
Abstract
A semiconductor thin film comprises an n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II. A solar cell using this semiconductor thin film comprises a substrate and a rear electrode, a p-type compound semiconductor layer, an n-type compound semiconductor layer, an n-type semiconductor layer, a window layer, and a transparent conductive film, formed in this order on the substrate. The n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II has a high carrier density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.