Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof

US6107643A · kind A · utility

Assignee

• ABB AB · SE

Inventors

• Per Skytt
• Erik Johansson · Lund, SE
• Mark Irwin

Key dates

• Filing date: Mar 24, 1999
• Grant date: Aug 22, 2000
• Expiry date: Mar 24, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/22

Abstract

A photoconductive switch, having at least a part of a first layer doped with dopants providing substantially no free charge carriers for charge transport between the electrodes at the normal operation temperature of the switch, has the nature of the doping, i.e., concentration, type (n or p). The dopants, varied from the first side to an opposite, second side of the first layer for co-operating with the intensity distribution of the light emitted by an illumination source, strikes the first side versus energy so as to obtain a substantially even creation of free charge carriers throughout the depth of the first layer from the first to the second side when illuminated by the illumination source.