Metal-semiconductor-metal photodetector
US6107652A · kind A · utility
16Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Jan 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2275
Abstract
A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping plane situated in the vicinity of the join between the absorbent layer and the transition layer of graded composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.