Methods for and products of growth of single-crystal on arrayed nucleation sites (SCANS) defined in nucleation unfriendly substrates
US6110278A · kind A · utility
Inventor
Key dates
| Filing date | Aug 10, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Aug 10, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/913
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A template for seeding growth of a desired single-crystal material (e.g., Si, GaAs) is created by passing through a monocrystalline channelizing mask, in a channelizing direction thereof, at least one of a nucleation-friendly species (e.g., Si, Ga) and a knock-off species (e.g., Ar, F) for respective implant of a nucleation-friendly species within or removal of a nucleation-unfriendly material (e.g., SiO.sub.2) of a supplied substrate. The desired single-crystal material is then grown in epitaxial-like manner from the thus-formed seeding-template. In one embodiment, silicon ions are projected through a monocrystalline silicon mask of a selected crystal orientation ((100), or (111)) in its channelizing direction so as to implant the silicon ions in a silicon dioxide layer of a supplied substrate according to the selected crystal orientation of the channelizing mask. Monocrystalline silicon is then epitaxially grown on top of the silicon dioxide layer with the same crystal orientation. Three-dimensional integrated circuits (3D ULSIC's or UPIC's) may then be formed with this technique. The technique may be extended to many other fields of application that can benefit from economic for…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.