Process for making compound films
US6110543A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Nov 23, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed to a process for forming compound films that contain at least three elements. The films are formed on a substrate by directing a gas containing reactant species onto the substrate. The compound film is formed from an interaction between two reactant species. The third element is incorporated into the film as it formed. The third element is different from the other two elements that form the compound film and is hydrogen, deuterium, or oxygen. The presence of the third element enhances the properties of the compound film. At least a portion of the substrate remains within the purview of the plasma discharge while the compound film is formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.