Composite material for heat sinks for semiconductor devices and method for producing the same
US6110577A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Feb 12, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249974
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A high-pressure vessel is allowed to be in an initial state, and a first chamber is disposed downward. Copper or copper alloy is placed in the first chamber, and SiC is set in a second chamber. The high-pressure vessel is tightly sealed, and then the inside of the high-pressure vessel is subjected to vacuum suction through a suction pipe. An electric power is applied to a heater to heat and melt the copper or copper alloy in the first chamber. At a stage at which the molten copper in the first chamber arrives at a predetermined temperature, the high-pressure vessel is inverted by 180 degrees to give a state in which SiC is immersed in the molten copper. An impregnating gas is introduced into the high-pressure vessel through a gas inlet pipe to apply a pressure to the inside of the high-pressure vessel. Thus, SiC is impregnated with the molten copper. The high-pressure vessel is inverted by 180 degrees, and then the impregnating gas in the high-pressure vessel is discharged through a gas outlet pipe, simultaneously with which a cooling gas is introduced into the high-pressure vessel through the gas inlet pipe to cool the high-pressure vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.