Low resistive tantalum thin film structure and method for forming the same
US6110598A · kind A · utility
6Cited by
5References
7Claims
0Family size
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Key dates
| Filing date | Oct 26, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Oct 26, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a lamination structure of a tantalum nitride film and a tantalum thin film free of nitrogen overlying the tantalum nitride film, which have reduced resistivities, wherein a gas pressure during sputtering for growing the tantalum nitride film is limited to a predetermined value not more than about 0.5 pa so that the tantalum nitride film has a hexagonal crystal structure and the tantalum thin film free of nitrogen has a BCC structure with lattice spacing close to that of the tantalum nitride film hexagonal crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.