Method of passivating the surface of a Si substrate
US6110840A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Feb 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02043
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of passivating the surface of a Si wafer is disclosed including the steps of cleaning the surface of the Si wafer and depositing an alkaline earth metal on the clean surface at a wafer temperature in a range of approximately 400.degree. C. to 750.degree. C. The surface is monitored during deposition to detect a (4.times.2) surface reconstruction pattern indicating approximately a one-quarter monolayer of alkaline earth metal is formed. The wafer is annealed at a temperature in a range of 800.degree. C. to 900.degree. C. until the alkaline earth metal forms an alkaline earth metal silicide with a (2.times.1) surface pattern on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.