Light-emitting apparatus and method of fabrication
US6111270A · kind A · utility
38Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Apr 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/876
Abstract
Light emitting apparatus is disclosed including a thin film transistor, a capacitor and an organic electroluminescent device. The thin film transistor includes a semiconductive layer having spaced apart first and second doped regions defining first and second current carrying terminals with a channel therebetween, an insulating layer overlying the channel and a control terminal formed on the insulating layer. A portion of the control terminal overlies a portion of the first doped region to form the capacitor. The organic electroluminescent device includes a first terminal connected to the second current carrying terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.