Semiconductor light source formed of layer stack with total thickness of 50 microns
US6111272A · kind A · utility
73Cited by
6References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Sep 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A semiconductor light source with low photon absorption is not only structurally simple, but is also easy to produce. The light source is formed of a layer stack with a total thickness of 50 .mu.m which is secured at a separate carrier body and connected to contacts of the carrier body with this thickness alone i.e. without intimate connection to a substrate, by a separate connecting structure. The diode is advantageous for realizing IREDs and LEDs of high optical performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.