Body contacted dynamic memory
US6111778A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 1999 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | May 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/33
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A dynamic memory circuit in which the inherent bipolar transistor effect within a floating body transistor is utilized to store an information bit. A floating body of a storage transistor stores an information bit in the form of an electric charge. The floating body is charged and discharged via an access transistor during data write operations. The inherent bipolar transistor resident within the floating body transistor increases the effective capacitance of the floating body which acts as the storage node, and thereby enhances the magnitude of the discharge current which represents the stored information bit during read operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.