Radiation hardened six transistor random access memory and memory device
US6111780A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 4, 1999 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Jun 4, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4125
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device can include a radiation hardened, static random access memory (SRAM) cell having a first inverter pair including a first PFET and a first NFET coupled in series drain to drain by a resistor whose resistance can be an order of magnitude (i.e., ten times) larger than the source to drain resistance of the first PFET, a second inverter pair including a second PFET and a second NFET coupled in series drain to drain by a resistor whose resistance can be an order of magnitude larger than the source to drain resistance of the second PFET, the first or second PFET can include a P+ drain difflusion in an NWELL where a portion of the gate can overlie the P+ drain diffusion, a first pass gate PFET coupled to the gate of the first PFET, the gate of the first NFET, and the P+ drain diffusion of the second PFET, and a second pass gate PFET coupled to the gate of the second PFET, the gate of the second NFET, and the P+ drain diffusion of the first PFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.