Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
US6111784A · kind A · utility
80Cited by
19References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Sep 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
It provides a magnetic thin film memory element utilizing the GMR effect. The memory element comprising a first magnetic layer with a closed magnetic circuit structure, a second magnetic layer with a closed magnetic circuit structure having a coercive force higher than that of the first magnetic layer, and a non-magnetic layer disposed between the first and second magnetic layers, at least a part of which is made of an insulating material. It also discloses methods for recording and reproducing information in and from such memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.