Patent · US Expired

Method and apparatus for protecting gate electrodes of target transistors in the gate array from gate charging by employing free transistors in the gate array

US6113648A · kind A · utility

7Cited by
5References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 17, 1998
Grant dateSep 5, 2000
Priority date
Expiry dateFeb 17, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/907

Abstract

In a gate array having a plurality of free transistors and target transistors, a method and apparatus for protecting a gate electrode of a target transistor from gate charge by employing a free transistor as a gate electrode protection device. A target transistor is a transistor that has been determined to need gate charging protection. A free transistor is a transistor in the gate array which is not used to implement the logic design as embodied in the gate array. Initially, a base array is formed without any metal layers. Then, a determination is made as to which transistors require gate charging protection. The gate electrode of each target transistor determined to require gate charging is coupled to an associated drain or source electrode of a free transistor of the gate array. The gate electrode of the free transistor is connected to an appropriate voltage reference to turn the free transistor off.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.