Method of crystallizing amorphous silicon layer
US6113689A · kind A · utility
13Cited by
8References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Mar 26, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/903
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of crystallizing an amorphous silicon layer on a substrate includes the steps of irradiating the amorphous silicon layer by a laser beam positioned over the amorphous silicon layer and having a predetermined repeat rate, while simultaneously partially heating the laser-irradiated part of the amorphous silicon layer upwardly with an RTP, thus crystallizing the amorphous silicon by a laser without damaging the glass substrate by a high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.