Method of preparing crystalline alkaline earth metal oxides on a Si substrate
US6113690A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Jun 8, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of preparing crystalline alkaline earth metal oxides on a Si substrate wherein a Si substrate with amorphous silicon dioxide on a surface is provided. The substrate is heated to a temperature in a range of 700.degree. C. to 800.degree. C. and exposed to a beam of alkaline earth metal(s) in a molecular beam epitaxy chamber at a pressure within approximately a 10.sup.-9 -10.sup.-10 Torr range. During the molecular beam epitaxy the surface is monitored by RHEED technique to determine a conversion of the amorphous silicon dioxide to a crystalline alkaline earth metal oxide. Once the alkaline earth metal oxide is formed, additional layers of material, e.g. additional thickness of an alkaline earth metal oxide, single crystal ferroelectrics or high dielectric constant oxides on silicon for non-volatile and high density memory device applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.