Apparatus and process for the formation of monocrystalline silicon carbide (SiC) on a nucleus
US6113692A · kind A · utility
9Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1997 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Mar 25, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to an apparatus for forming SiC on a nucleus. The apparatus comprises a first enclosure (100) defined by at least one wall (102, 110, 112) and able to receive a SiC nucleus (122), a SiC powder reservoir (118) and means (120) for heating the enclosure and, according to the invention, the wall (102, 110, 112) is essentially covered by at least one SiC layer (116).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.