Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components
US6113977A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1997 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Sep 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of growing a ZnS:Mn phosphor layer suitable for use in thin-film electroluminescent components. According to the method, the ZnS:Mn phosphor layer is grown on a substrate by means of the ALE method using volatile zinc, sulfur and manganese compounds as the precursors. According to the invention, an organozinc compound such as diethylzinc or dimethylzinc is used as precursor for zinc, hydrogen sulfide or an organosulfur compound is used as precursor for sulfur, and an organomanganese compound or organic manganese complex compound is used as precursor for manganese. The invention provides a display component with drive-voltage-symmetrical light emission and stable characteristics of luminance level and turn-on voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.