Method of fabricating an integrated complex-transition metal oxide device
US6114188A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1997 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Mar 13, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68368
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for the fabrication complex-transition metal oxide (CTMO)/semiconductor or dielectric substrate integrated devices includes the separation of the CTMO film growth process from the CTMO-film/semiconductor or dielectric substrate integration process. The CTMO-film is transferred from the native substrate to the final substrate for fabrication into devices. The CTMO-film is grown onto a native substrate under growth conditions chosen to provide a CTMO-film having desirable properties and thickness. No restrictions are placed upon the native substrate used, the growth method used, or on the growth conditions required. The CTMO-film is then joined to the semiconductor or dielectric substrate and the native substrate is removed, providing the basis for an integrated electronics, photonics, or MEMS device. Techniques fully compatible with semiconductor processing can be used to fabricate monolithically integrated CTMO/semiconductor devices in a first embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.