Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity
US6114249A · kind A · utility
26Cited by
17References
5Claims
0Family size
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Key dates
| Filing date | Mar 10, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Mar 10, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A colloidal silica slurry containing triethanolamine is used in a chemical mechanical polishing process to polish multiple material substrates, such as silicon wafers containing silicon oxide where a thin underlayer of silicon nitride is used as a stop layer. The colloidal silica slurry containing triethanolamine is capable of achieving an oxide to nitride selectivity during polishing up to a demonstrated ratio of 28:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.