Magnetoresistance effect element, and magnetoresistance effect sensor and magnetic information recording and playback system using same
US6114850A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 17, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Mar 17, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnoresistance effect element made up of an anti-ferromagnetic layer, a fixed magnetic layer, a non-magnetic and a free magnetic layer, laminated successively onto a base layer. The ant-ferromagnetic layer is a layer film or multiple layer film comprising Ni oxide, Co oxide, or Fe oxide as a principal component, or a mixture of these. An adhesive layer for preventing peeling due to heat generated by the flow of current is provided between the base layer and the anti-ferromagnetic layer. By providing an adhesive layer between the base layer and the ferromagnetic layer in this way, the adhesive force between the base layer and the anti-ferromagnetic layer is increased, and therefore peeling does not occur, even if there are temperature changes in the magnetoresistance effect element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.