Low distortion compensated field effect transistor (FET) switch
US6114897A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 22, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Oct 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An electronic switch is disclosed that comprises a switch element and compensation circuitry. The switch element is operable to pass a signal between signal terminals responsive to a voltage applied to its control terminal. The compensation circuitry applies a bias voltage to the control terminal that tracks an average of a voltage at the signal terminals and is offset by a substantially constant voltage magnitude. The bias voltage insures a substantially uniform resistance across the switch element as the signal varies. In one implementation, the switch element is a field effect transistor. Further, in another embodiment, compensation circuitry can be coupled to a backgate of the switch element. In this case, the compensation circuitry can apply a bias voltage to the backgate that tracks an average of the voltage at the signal terminals and is offset by a substantially constant voltage magnitude. The second bias voltage offsets the backgate to back bias the backgate to channel semiconductor junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.