Patent · US Expired

Process for producing a silicon single crystal, and heater for carrying out the process

US6117230A · kind A · utility

5Cited by

6References

6Claims

0Family size

Assignee

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG · DE

Inventors

Wilfried Ammon · Burghausen, DE
Erich Tomzig · Altötting, DE
Paul Fuchs · Homborn, DE
Yuri Gelfgat · Beer Sheva, IL

Key dates

Filing date	Nov 25, 1997
Grant date	Sep 12, 2000
Priority date	—
Expiry date	Nov 25, 2017

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1068
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A process for producing a silicon single crystal by the Czochralski method, utilizes a heater which is intended for heating a silicon-filled crucible and is arranged below the crucible. The process has energy delivered to the melt at least some of the time inductively using a coiled heater arranged under the crucible. The heater is in the form of a wound coil.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.