Adjustable selectivity etching solutions and methods of etching semiconductor devices using the same
US6117350A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1996 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Jul 19, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Solutions useful for etching semiconductor devices comprise ammonium fluoride, hydrofluoric acid, hydrogen peroxide, and water. Processes for forming the solutions comprise mixing first solutions which comprise ammonium fluoride, hydrofluoric acid, and water with second solutions which comprise hydrogen peroxide and water to form the solutions of the invention. Methods for etching semiconductor devices comprise contacting the devices which comprise a substrate and oxide layer thereon with the solutions of the invention to etch the devices. The oxide layer, for example a damaged silicon oxide layer on a silicon substrate, is selectively etched to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.