Method for producing light-emitting material
US6117363A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Mar 10, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K11/7745
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
There is provided a novel method for manufacturing a light-emitting material composed of II-VI group semiconductors having a nano structure crystal and which is optimally doped with an activator. In a manufacturing method for the light-emitting material, a II-VI group semiconductor doped with an activator by a liquid phase reaction having a co-precipitation product is formed and an organic acid is added to the liquid phase reaction system. In another manufacturing method for the light-emitting material, a II-VI group semiconductor doped with an activator by a liquid phase reaction having a product co-precipitation is formed and a high molecular organic acid or polystyrene is added after the end of the liquid phase reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.