Monolithic multiple wavelength VCSEL array
US6117699A · kind A · utility
24Cited by
15References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 10, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Apr 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An array of n-wavelength vertical cavity surface emitting lasers (VCSELs) can be grown with precise and repeatable wavelength control. First, a foundation VCSEL structure is grown on a substrate. Next, n-paired layers of AlGaAs and InGaP are grown, where n is the desired number of different wavelengths. Next, one of the n regions is masked and etched. The steps of masking and etching are repeated until all n regions are etched. Finally, the upper VCSEL structure is grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.