Methods of fabricating integrated circuit field effect transistors by performing multiple implants prior to forming the gate insulating layer thereof

US6117715A · kind A · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventor

• Dae Won Ha · Seoul, KR

Key dates

• Filing date: Aug 28, 1998
• Grant date: Sep 12, 2000
• Expiry date: Aug 28, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0128

Abstract

Multiple implants are performed in an integrated circuit substrate by implanting ions into a face thereof. Then, a gate insulating layer and a gate electrode are formed on the face of the integrated circuit substrate after performing the multiple implants in the integrated circuit substrate. Preferably, ions are not implanted into the integrated circuit substrate through the face after forming the gate insulating layer and the gate electrode on the face of the integrated circuit substrate. By preferably performing all implants prior to forming a gate insulating layer, the gate insulating layer is not degraded by implanting ions into the face of the integrated circuit substrate through the gate insulating layer.