Method and apparatus for blanket aluminum CVD on spherical integrated circuits
US6117772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for metal-organics chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method includes pretreating the spherical substrate with a vapor of a first precursor in preparation for a deposition of a metal layer. The pretreated spherical substrate is then exposed to a thermally dissociated precursor of metal for depositing the metal layer onto the spherical substrate, wherein the exposure to the thermally dissociated precursor of metal provides a uniformly deposited metal layer coverage over the pretreated spherical substrate. The deposited metal layer is then annealed and cooled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.