Thin-film microstructure sensor having a temperature-sensitive resistor to provide a large TCR with little variation
US6118166A · kind A · utility
12Cited by
5References
6Claims
0Family size
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Key dates
| Filing date | Jan 27, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Jan 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin-film microstructure sensor includes a substrate having an insulation layer. A thin-film platinum temperature-sensitive resistor is provided on the insulation layer of the substrate, the thin-film platinum temperature-sensitive resistor comprising a platinum layer, the platinum layer having a maximum crystal grain size above a reference grain size of 800 .ANG.. The thin-film platinum temperature-sensitive resistor is formed by a sputtering process to provide a temperature coefficient of resistance TCR above a reference TCR level of 3200 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.