Semiconductor device having a pedestal structure and method of making
US6118171A · kind A · utility
55Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Dec 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/40
Abstract
A semiconductor device (10) is formed in a pedestal structure (16) overlying a semiconductor substrate (11). The semiconductor device (10) includes a base region (44) that contacts the corners (13) of the pedestal structure (16). Electrical connection to the base region (44) is provided by a conductive layer (28) that contacts the sides (12) and corners (13) of the pedestal structure (16).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.