Magneto-resistance effect element having a magnetic biasing film
US6118624A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3295
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin valve GMR element comprises a spin valve GMR film stacked in turn a pinned layer, a non-magnetic layer, and a free layer of which magnetization direction varies according to an external magnetic field, and a magnetic biasing film providing a bias magnetic field to the free layer. A spin valve GMR film can be a dual element type. A magnetic biasing film has a stacked film of a high saturation magnetization magnetic layer and a hard magnetic layer. The high saturation magnetization magnetic layer has saturation magnetization Ms.sup.high which, when saturation magnetization of the free layer is Ms.sup.free and saturation magnetization of the hard magnetic layer is Ms.sup.hard, satisfies at least one of Ms.sup.high .gtoreq.Ms.sup.free or Ms.sup.high .gtoreq.Ms.sup.hard. In a spin valve GMR head of a reversed structure or a dual element type, even when a track width is narrowed, occurrence of Barkhausen noise can be effectively suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.