Patent · US Expired

Dual storage cell memory

US6118690A · kind A · utility

9Cited by
3References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 27, 1995
Grant dateSep 12, 2000
Priority date
Expiry dateNov 27, 2015

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C19/287
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A dual storage cell memory includes an array of dual storage cells, each of the dual storage cells containing a first memory cell and a second memory cell. The first and second memory cells are well known six-transistor static memory cells with the addition of transfer circuitry for transferring data directly from the internal data nodes of each of the memory cells to its corresponding complementary memory cell without requiring the use of the enable transistors or the bit lines associated with each of the dual storage cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.