Semiconductor laser and cleaving method
US6118800A · kind A · utility
24Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1997 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Dec 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0658
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser having an active layer and a cladding structure interposing the active layer, the cladding structure includes a saturable absorbing layer, and the saturable absorbing layer is formed of InGaAsP.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.